型号：D18V0S1U2LP1610-7；Package：U-DFN1610-2；ONE CHANNEL HIGH SURGE TVS DIODE

Features • Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV • One Channel of ESD Protection • Low Channel Input Capacitance • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications

文件：285.48 Kbytes 页数：5 Pages

DIODES

美台半导体

型号：TK71518AS；Package：SOT-23；LOW DROPOUT VOLTAGE REGULATOR

文件：114.97 Kbytes 页数：15 Pages

Toko

型号：18T0035；Schottky Rectifiers

Schottky Rectifiers

文件：59.28 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

型号：18T10；N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 18T10 is an N-channel enhancement mode Power MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge, etc. The UTC 18T10 is suitable for low voltage applications such as DC/DC converters,

文件：163.65 Kbytes 页数：3 Pages

UTC

友顺

型号：18T10AGJ-HF；N-Channel 100-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling

文件：1.88855 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

型号：18T10GJ；N-Channel 100-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling

文件：1.035619 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

型号：18T10G-TN3-R；N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 18T10 is an N-channel enhancement mode Power MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge, etc. The UTC 18T10 is suitable for low voltage applications such as DC/DC converters,

文件：163.65 Kbytes 页数：3 Pages

UTC

友顺

型号：18T10G-TN3-T；N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 18T10 is an N-channel enhancement mode Power MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge, etc. The UTC 18T10 is suitable for low voltage applications such as DC/DC converters,

文件：163.65 Kbytes 页数：3 Pages

UTC

友顺

型号：18T10L-TN3-R；N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 18T10 is an N-channel enhancement mode Power MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge, etc. The UTC 18T10 is suitable for low voltage applications such as DC/DC converters,

文件：163.65 Kbytes 页数：3 Pages

UTC

友顺

型号：18T10L-TN3-T；N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 18T10 is an N-channel enhancement mode Power MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge, etc. The UTC 18T10 is suitable for low voltage applications such as DC/DC converters,

文件：163.65 Kbytes 页数：3 Pages

UTC

友顺