RM17N800T2芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
RM17N800HD	文件：893.56 Kbytes Page：12 Pages	丝印：17N800；Package：TO-263；N-Channel Super Junction Power MOSFET III Features New technology for high voltage device Low on-resistance and low conduction losses. Small package Ultra Low Gate Charge cause lower diving requirements. 100 Avalanche Tested ROHS compliant 文件：893.56 Kbytes 页数：12 Pages	RECTRON	RECTRON
RM17N800T2	文件：893.56 Kbytes Page：12 Pages	丝印：17N800；Package：TO-220；N-Channel Super Junction Power MOSFET III Features New technology for high voltage device Low on-resistance and low conduction losses. Small package Ultra Low Gate Charge cause lower diving requirements. 100 Avalanche Tested ROHS compliant 文件：893.56 Kbytes 页数：12 Pages	RECTRON	RECTRON
RM17N800TI	文件：893.56 Kbytes Page：12 Pages	丝印：17N800；Package：TO-220F；N-Channel Super Junction Power MOSFET III Features New technology for high voltage device Low on-resistance and low conduction losses. Small package Ultra Low Gate Charge cause lower diving requirements. 100 Avalanche Tested ROHS compliant 文件：893.56 Kbytes 页数：12 Pages	RECTRON	RECTRON

更多17N800供应商更新时间2025-8-8 11:06:00