SPA17N80C3

Marking：17N80C3；Package：TO-220-3-31；Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •PG-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) •Pb

SPP17N80C3

Marking：17N80C3；Package：TO-220；Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •PG-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) •Pb

SPA17N80C3

Marking：17N80C3；Package：TO-220-3-31；Cool MOS??Power Transistor

SPP17N80C3

Marking：17N80C3；Package：TO-220；Cool MOS??Power Transistor

SPP17N80C3

Marking：17N80C3；Package：TO-220；New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

SPP17N80C3

Marking：17N80C3；Package：TO-220；CoolMOS Power Transistor Features New revolutionary high voltage technology