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SPA17N80C3

Marking:17N80C3;Package:TO-220-3-31;Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •PG-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) •Pb

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPP17N80C3

Marking:17N80C3;Package:TO-220;Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •PG-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) •Pb

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPA17N80C3

Marking:17N80C3;Package:TO-220-3-31;Cool MOS??Power Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPP17N80C3

Marking:17N80C3;Package:TO-220;Cool MOS??Power Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPP17N80C3

Marking:17N80C3;Package:TO-220;New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPP17N80C3

Marking:17N80C3;Package:TO-220;CoolMOS Power Transistor Features New revolutionary high voltage technology

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

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