丝印：16H120G3AG；Package：HPAK-7；Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mΩ typ., 112 A in an H²PAK-7 package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Applications • DC/DC converter for EV/HEV • Main inverter (electric traction)

文件：666.09 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体