丝印：13NM60N；Package：I2PAKFP；N-channel 600 V, 0.28 廓, 11 A MDmesh??II Power MOSFET in I짼PAKFP package

Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitabl

文件：782.35 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.320 廓, 10 A PowerFLAT??(8x8) HV MDmesh??II Power MOSFET

Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitabl

文件：835.94 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650V (D-S) Power MOSFET

文件：1.06718 Mbytes 页数：9 Pages

VBSEMI

微碧半导体