13A 650V N-channel enhancement mode field effect transistor

文件：685.58 Kbytes 页数：5 Pages

YFWDIODE

佑风微

丝印：13N65AF；Package：TO-220F(1.3mm)；13A 650V N-channel enhancement mode field effect transistor

文件：685.58 Kbytes 页数：5 Pages

YFWDIODE

佑风微

N-Channel MOSFET 650V, 14A, 0.46(ohm)

文件：835.88 Kbytes 页数：6 Pages

MGCHIP

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：717.4 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 700V@TJ max, 12.3A, RDS(ON) = 0.32W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

文件：504.6 Kbytes 页数：5 Pages

CET-MOS

华瑞