丝印：133N12N6；Package：PG-TO263-3；MOSFET OptiMOS™ 6 Power‑Transistor, 120 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching • Pb‑free lead plating; RoHS co

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