HiPerFET™ Power MOSFETs Single Die MOSFET

VDSS = 300 V\nID25 = 130 A\nRDS(on) = 22 mΩ\ntrr < 250 nsN-Channel Enhancement Mode\nAvalanche Rated, High dv/dt, Low trr International standard packages\nminiBLOC, with Aluminium nitride isolation\nLow RDS (on) HDMOS™ process\nRugged polysilicon gate cell structure\nUnclamped Inductive Switching (UIS) rated\nLow package inductance\nFast intrinsic RectifierApplications\nDC-DC converters\nBattery chargers\nSwitched-mode;

Littelfuse

力特

N-Channel Enhancement Mode MOSFET

文件：236.66 Kbytes 页数：4 Pages

DACO

罡境电子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=130A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 18mΩ(TYP) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION ·motor drive, DC-DC c

文件：435.86 Kbytes 页数：3 Pages

ISC

无锡固电

HiPerFET Power MOSFETs Single Die MOSFET

VDSS = 300 V ID25 = 130 A RDS(on) = 22 mΩ trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features International standard packages miniBLOC, with Aluminium nitride isolation Low RDS (on) HDMOS™ process Rugged polysilicon gate cell structure

文件：162.16 Kbytes 页数：4 Pages

IXYS

艾赛斯