丝印：130N20N；Package：PG-TSON-8；MOSFET OptiMOSTM 6 Power-Transistor, 200 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • 175°C operating temperature • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • MSL 1 classified acc

文件：1.06956 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：130N20N6；Package：PG-TO220-3；MOSFET OptiMOS™ 6 Power‑Transistor, 200 V

Features • N‑channel, normal level • Low on‑resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • 175°C operating temperature • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • 100% avalanche tested

文件：895.84 Kbytes 页数：12 Pages

Infineon

英飞凌