3.0SMC13

Marking：13；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES Forsurfacemountedapplicationsinordertooptimizeboard space. Lowprofilepackage. Glasspassivatedjunction. Lowinductance. 3000Wpeakpulsepowercapabilityat10x1000uswaveform, repetitionrate(dutycycles):0.01 PlasticpackagehasUnderwritersLaboratoryFlammability.

7UL1T02FS

Marking：13；Package：fSV；CMOS Digital Integrated Circuits Silicon Monolithic

FunctionalDescription •2-InputNORGatewithLevelShifting Features (1)Wideoperatingtemperaturerange:Topr=-40to125 (2)Operatingsupplyvoltagerange:VCC=2.3Vto3.6V (3)Thehigh-levelinputvoltageisuptranslationtothepowersupplyvoltage. (4)Thehigh-levelinput

7UL1T02FU

Marking：13；Package：SOT-353；2-Input NOR Gate with Level Shifting

Features (1)Wideoperatingtemperaturerange:Topr=-40to125 (2)Operatingsupplyvoltagerange:VCC=2.3Vto3.6V (3)Thehigh-levelinputvoltageisuptranslationtothepowersupplyvoltage. (4)Thehigh-levelinputvoltageisdowntranslationtothepowersupplyvoltage. (5)3.6V

7UL1T02LF

Marking：13；Package：SOT-353；2-Input NOR Gate with Level Shifting

Features (1)Wideoperatingtemperaturerange:Topr=-40to125 (2)Operatingsupplyvoltagerange:VCC=2.3Vto3.6V (3)Thehigh-levelinputvoltageisuptranslationtothepowersupplyvoltage. (4)Thehigh-levelinputvoltageisdowntranslationtothepowersupplyvoltage. (5)3.6V

BC847BPN

Marking：13；Package：TSSOP6；45 V, 100 mA NPN/PNP general-purpose transistor

Featuresandbenefits •Lowcollectorcapacitance •Lowcollector-emittersaturationvoltage •Closelymatchedcurrentgain •Reducesnumberofcomponentsandboardspace •Nomutualinterferencebetweenthetransistors

BC847BPN-Q

Marking：13；Package：TSSOP6；45 V, 100 mA NPN/PNP general-purpose transistor

Featuresandbenefits •Lowcollectorcapacitance •Lowcollector-emittersaturationvoltage •Closelymatchedcurrentgain •Reducesnumberofcomponentsandboardspace •Nomutualinterferencebetweenthetransistors •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotive

BC847BVN

Marking：13；Package：SOT666；45 V, 100 mA NPN/PNP general purpose transistor

Featuresandbenefits •300mWtotalpowerdissipation •Verysmall1.6mmx1.2mmultrathinpackage •ReplacestwoSC-75/SC-89packagedtransistorsonsamePCBarea •ReducedrequiredPCBarea •Reducedpickandplacecosts

BSS84

Marking：13；Package：SOT23；P-channel enhancement mode vertical DMOS transistor

1.1Generaldescription P-channelenhancementmodeverticalDiffusionMetal-OxideSemiconductor(DMOS) transistorinasmallSurface-MountedDevice(SMD)plasticpackage. [1]/DG:halogen-free 1.2Features 1.3Applications Table1.Productoverview Typenumber[1]Package NXPJEDEC BSS84S

CMZ13A

Marking：13；Package：3-4E1S；Zener Diode Silicon Epitaxial Planar

Applications •Surgeabsorber Features (1)Powerdissipation:PD=2W (2)Zenervoltage:Vz=12to51V (3)Theuseofsmall,thinsurface-mountpackageisoptimumwayforhigh-densitymounting. Nickname:M-FLATTM

D34V0H1U2LP-7B

Marking：13；Package：X1-DFN1006-2；34V UNI-DIRECTIONAL TVS DIODE

Features LowProfilePackage(0.53mmMax)andUltra-SmallPCBFootprint Area(1.08mm*0.68mmMax)SuitableforCompactPortable Electronics ProvidesESDProtectionperIEC61000-4-2Standard: Air±20kV,Contact±18kV 1ChannelofESDProtection LowChannelInputCapacitance Total