丝印：13；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES For surface mounted applications in order tooptimize board space. Low profile package. Glass passivated junction. Low inductance. 3000W peak pulse power capability at 10x1000us waveform, repetition rate (duty cycles):0.01 Plastic package has Underwriters Laboratory Flammability.

文件：325.35 Kbytes 页数：5 Pages

YFWDIODE

佑风微

丝印：13；Package：fSV；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • 2-Input NOR Gate with Level Shifting Features (1) Wide operating temperature range: Topr = -40 to 125 (2) Operating supply voltage range: VCC = 2.3 V to 3.6 V (3) The high-level input voltage is up translation to the power supply voltage. (4) The high-level input

文件：172.31 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：13；Package：SOT-353；2-Input NOR Gate with Level Shifting

Features (1) Wide operating temperature range: Topr = -40 to 125 (2) Operating supply voltage range: VCC = 2.3 V to 3.6 V (3) The high-level input voltage is up translation to the power supply voltage. (4) The high-level input voltage is down translation to the power supply voltage. (5) 3.6 V

文件：174.78 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：13；Package：SOT-353；2-Input NOR Gate with Level Shifting

Features (1) Wide operating temperature range: Topr = -40 to 125 (2) Operating supply voltage range: VCC = 2.3 V to 3.6 V (3) The high-level input voltage is up translation to the power supply voltage. (4) The high-level input voltage is down translation to the power supply voltage. (5) 3.6 V

文件：174.78 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：13；Package：TSSOP6；45 V, 100 mA NPN/PNP general-purpose transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and board space • No mutual interference between the transistors

文件：264.91 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：13；Package：TSSOP6；45 V, 100 mA NPN/PNP general-purpose transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and board space • No mutual interference between the transistors • Qualified according to AEC-Q101 and recommended for use in automotive

文件：267.45 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：13；Package：SOT666；45 V, 100 mA NPN/PNP general purpose transistor

Features and benefits • 300 mW total power dissipation • Very small 1.6 mm x 1.2 mm ultra thin package • Replaces two SC-75/SC-89 packaged transistors on same PCB area • Reduced required PCB area • Reduced pick and place costs

文件：200.96 Kbytes 页数：9 Pages

NEXPERIA

安世

丝印：13；Package：SOT23；P-channel enhancement mode vertical DMOS transistor

1.1 General description P-channel enhancement mode vertical Diffusion Metal-Oxide Semiconductor (DMOS) transistor in a small Surface-Mounted Device (SMD) plastic package. [1] /DG: halogen-free 1.2 Features 1.3 Applications Table 1. Product overview Type number[1] Package NXP JEDEC BSS84 S

文件：192.2 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：13；Package：3-4E1S；Zener Diode Silicon Epitaxial Planar

Applications • Surge absorber Features (1) Power dissipation : PD = 2W (2) Zener voltage : Vz = 12 to 51V (3) The use of small, thin surface-mount package is optimum way for high-density mounting. Nickname: M-FLATTM

文件：266.72 Kbytes 页数：6 Pages

TOSHIBA

东芝

丝印：13；Package：X1-DFN1006-2；34V UNI-DIRECTIONAL TVS DIODE

Features  Low Profile Package (0.53mm Max) and Ultra-Small PCB Footprint Area (1.08mm * 0.68mm Max) Suitable for Compact Portable Electronics  Provides ESD Protection per IEC61000-4-2 Standard: Air ±20kV, Contact ±18kV  1 Channel of ESD Protection  Low Channel Input Capacitance  Total

文件：291.42 Kbytes 页数：5 Pages

DIODES

美台半导体