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CEB12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-11A,RDS(ON)=315mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-9A,RDS(ON)=315mΩ@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CED12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-9A,RDS(ON)=315mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEP12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-11A,RDS(ON)=315mΩ@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEP12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-11A,RDS(ON)=315mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEU12P10

P-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEU12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-9A,RDS(ON)=315mΩ@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEU12P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-9A,RDS(ON)=315mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

FQB12P10

100VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB12P10

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=-11.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

供应商型号品牌批号封装库存备注价格
UTC
23+
TO252
50000
全新原装正品现货,支持订货
询价
UTC/友顺
TO-252
22+
6000
十年配单,只做原装
询价
UTC
17+
TO252
3774
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
UTC/友顺
22+
TO-252
25000
只做原装进口现货,专注配单
询价
UTC
23+
TO-252
7250
原厂原装正品
询价
UTC/友顺
22+
TO-252
25000
只做原装进口现货,专注配单
询价
UTC/友顺
23+
TO-252
50000
原装正品 支持实单
询价
UTC
2024+
TO-252
500000
诚信服务,绝对原装原盘
询价
UTC/友顺
24+
TO-252
60000
询价
NK/南科功率
2025+
TO-252-L
986966
国产
询价
更多12P10G-TMS-T供应商 更新时间2025-7-14 9:01:00