丝印：128HD；Package：SOIC；INA12x-HT Precision, Low-Power Instrumentation Amplifiers

1 Features 1• Low Offset Voltage: 25 uV Typical • Low Input Bias Current: 50 nA Typical (1) • High CMR: 95 dB Typical(1) • Inputs Protected to ±40 V • Wide Supply Range: ±2.25 V to ±18 V • Low Quiescent Current: 2 mA Typical(1) 2 Applications • Bridge Amplifiers • Thermocouple Amplifier

文件：1.046839 Mbytes 页数：33 Pages

TI

德州仪器

丝印：128HD；Package：SOIC；INA12x-HT Precision, Low-Power Instrumentation Amplifiers

1 Features 1• Low Offset Voltage: 25 uV Typical • Low Input Bias Current: 50 nA Typical (1) • High CMR: 95 dB Typical(1) • Inputs Protected to ±40 V • Wide Supply Range: ±2.25 V to ±18 V • Low Quiescent Current: 2 mA Typical(1) 2 Applications • Bridge Amplifiers • Thermocouple Amplifier

文件：1.046839 Mbytes 页数：33 Pages

TI

德州仪器

Silicon epitaxial planar type

文件：49.24 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon Complementary Transistors Audio Output, Video, Driver

Description: The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type package designed primarily for amplifier and switching applications. These devices features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide c

文件：27.8 Kbytes 页数：3 Pages

NTE

Silicon Complementary Transistors General Purpose Amp

Description: The NTE128P (NPN) and NTE129P (PNP) are silicon complemedntary transistors designed for use in general purpose power amplifier and switching applications. Features: • High VCE Ratings • Exceptional Power Dissipation Capability

文件：20.83 Kbytes 页数：2 Pages

NTE