N-Channel 20-V (D-S)175

FEATURES
TrenchFET Power MOSFET
175C Maximum Junction Temperature
100% Rg Tested

文件：252.26 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

丝印：110N20LF；Package：PG-TO263-3；OptiMOSTM 3 Linear FET, 200 V

Features • Ideal for hot-swap and e-fuse applications • Very low on-resistance RDS(on) • Wide safe operating area SOA • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC6

文件：997.29 Kbytes 页数：11 Pages

Infineon

英飞凌

OptiMOS™3 Power-Transistor

• N-channel, normal level\n• Excellent gate charge x R DS(on) product (FOM)\n• Very low on-resistance R DS(on)\n• 175 °C operating temperature\n• Pb-free lead plating; RoHS compliant\n• Qualified according to AEC Q101\n• Halogen-free according to IEC61249-2-21\n• Ideal for high-frequency switching a;

Infineon

英飞凌

N/A

E-T-A

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SMD

Knowles Syfer

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