丝印：105DN4L；Package：PowerFLAT；Automotive-grade dual N-channel 40 V, 3.5 mΩ typ., 40 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 DI

Features  AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness  Wettable flank package Applications  Switching applications Description This N-channel Power MOSFET utilizes

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STMICROELECTRONICS

意法半导体

SUPERCAPACITORS

CDE

SUPERCAPACITORS

CDE

SUPERCAPACITORS

CDE

Package：径向，Can；包装：散装 类别：电容器 双电层电容器（EDLC），超级电容器 描述：CAP 1F -20%, +50% 2.7V T/H

CDE

Package：径向，Can；包装：散装 类别：电容器 双电层电容器（EDLC），超级电容器 描述：CAP 1F 20% 5.5V THROUGH HOLE

CDE

Package：径向，Can；包装：散装 类别：电容器 双电层电容器（EDLC），超级电容器 描述：CAP 1F -20%, +50% 2.5V T/H

CDE