100B8R2CT500XT

RFPowerLDMOSTransistorHighRuggednessN--ChannelEnhancement--ModeLateralMOSFET

ATC100B8R2CT500XT

RFPowerFieldEffectTransistors

N--ChannelEnhancement--ModeLateralMOSFETs DesignedforCDMAbasestationapplicationswithfrequenciesfrom2110to 2170MHz.SuitableforCDMAandmulticarrieramplifierapplications.Tobe usedinClassABandClassCforPCN--PCS/cellularradioandWLL applications. •TypicalSingle--Ca

ATC100B8R2CT500XT

RFPowerLDMOSTransistors

N--ChannelEnhancement--ModeLateralMOSFETs These32WRFpowerLDMOStransistorsaredesignedforcellularbase stationapplicationsrequiringverywideinstantaneousbandwidthcapability coveringthefrequencyrangeof1805to1880MHz. Features DesignedforWideInstantaneousBandwidt

ATC100B8R2CT500XT

RFPowerLDMOSTransistor

N--ChannelEnhancement--ModeLateralMOSFET This38WRFpowerLDMOStransistorisdesignedforcellularbasestation applicationsrequiringverywideinstantaneousbandwidthcapabilitycovering thefrequencyrangeof1805to1995MHz. Features Designedforwideinstantaneousbandwidthap

ATC100B8R2CT500XT

RFPowerLDMOSTransistor

N--ChannelEnhancement--ModeLateralMOSFET This63wattasymmetricalDohertyRFpowerLDMOStransistorisdesigned forcellularbasestationapplicationsrequiringverywideinstantaneous bandwidthcapabilitycoveringthefrequencyrangeof1805to1880MHz. TypicalDohertySingle--Carrier

ATC100B8R2CT500XT

RFLDMOSWidebandIntegratedPowerAmplifiers