丝印：082N10LS；Package：TDSON-8；OptiMOS?? Power-Transistor

文件：441.9 Kbytes 页数：10 Pages

Infineon

英飞凌

100V N-Channel MOSFET

Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • 175 °C operating temperature • Ideal for high-frequency switching and synchronous rectification • VDS=100V • ID(at VGS=10V)=80A • RDS(ON) (at VGS=10V)

文件：485.69 Kbytes 页数：8 Pages

UMW

友台半导体

OptiMOS?? Power-Transistor

文件：441.9 Kbytes 页数：10 Pages

Infineon

英飞凌

N -CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF082N10NG uses advanced trench technology and design to provide excellent RDS(ON) withlowgate charge. It can be used in a wide variety ofapplications. ● Features Advance device constructure Low RDS(ON) to minimize conduction loss Low Gate Charge for fast switchi

文件：1.73977 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体