100V N-Channel MOSFET

Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • 175 °C operating temperature • Ideal for high-frequency switching and synchronous rectification • VDS=100V • ID(at VGS=10V)=80A • RDS(ON) (at VGS=10V)

文件：485.69 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：082N10N；Package：TO-252；100V N-Channel MOSFET

Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • 175 °C operating temperature • Ideal for high-frequency switching and synchronous rectification • VDS=100V • ID(at VGS=10V)=80A • RDS(ON) (at VGS=10V)

文件：485.69 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：082N10NS；Package：PG-TO220FullPAK；StrongIRFETTM2Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.06425 Mbytes 页数：10 Pages

INFINEON

英飞凌

丝印：082N10NS；Package：PG-TO220-3；StrongIRFETTM2Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.07489 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：082N10NS；Package：PG-TO220；StrongIRFETTM 2 Power-Transistor

文件：1.04566 Mbytes 页数：10 Pages

INFINEON

英飞凌

丝印：082N10NS；Package：PG-TO220-3；StrongIRFETTM 2 Power-Transistor

文件：1.10419 Mbytes 页数：11 Pages

INFINEON

英飞凌