N-Channel 60 V (D-S) MOSFET

文件：1.68923 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode Power MOSFET

Description The G080N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：661.39 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

OptiMOS짰 Power-Transistor

文件：446.46 Kbytes 页数：10 Pages

Infineon

英飞凌

OptiMOS??Power-Transistor Features Low gate charge for fast switching applications

文件：421.18 Kbytes 页数：10 Pages

Infineon

英飞凌