丝印：073N13N6；Package：PG-TO220-3；MOSFET OptiMOSTM 6 Power-Transistor, 135 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • 100 avalanche tested • 175°C operating temperature • Optimized for motor drives and battery powered applications • Pb-free lead pla

文件：1.59269 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：073N13N6；Package：PG-TO220-3；OptiMOSTM 6Power-Transistor, 135V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •100%avalanchetested •175°Coperatingtemperature •Optimizedformotordrivesandbatterypoweredapplications •Pb-freeleadplating;RoHScompliant •Halogen-fre

文件：1.59273 Mbytes 页数：11 Pages

INFINEON

英飞凌