N-Channel 20-V (D-S)175 C MOSFET

文件：1.46925 Mbytes 页数：6 Pages

VBSEMI

微碧半导体

N-Channel 20-V (D-S)175 C MOSFET

文件：1.46925 Mbytes 页数：6 Pages

VBSEMI

微碧半导体

丝印：06N03LA；Package：TO-263-3；OptiMOS 2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated

文件：347.1 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：06N03LA；Package：TO-263-3；OptiMOS 2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated

文件：347.1 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：06N03LA；Package：TO-220-3-1；OptiMOS 2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated

文件：347.1 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：06N03L；Package：TO-252；OptiMOS Buck converter series

文件：158.16 Kbytes 页数：8 Pages

Infineon

英飞凌

丝印：06N03LZ；Package：P-TO252-3-11；Ideal for high-frequency dc/dc converters

文件：510.76 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：06N03LZ；Package：P-TO251-3-11；Ideal for high-frequency dc/dc converters

文件：510.76 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：06N03LZ；Package：P-TO251-3-21；Ideal for high-frequency dc/dc converters

文件：510.76 Kbytes 页数：11 Pages

Infineon

英飞凌