OptiMOS 2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated

文件：347.1 Kbytes 页数：10 Pages

Infineon

英飞凌

N-Channel 30-V (D-S) MOSFET

文件：1.6892 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel 20-V (D-S)175 C MOSFET

文件：1.46925 Mbytes 页数：6 Pages

VBSEMI

微碧半导体

丝印：06N03LA；Package：TO-263-3；OptiMOS 2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated

文件：347.1 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：06N03LA；Package：TO-263-3；OptiMOS 2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated

文件：347.1 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：06N03LA；Package：TO-220-3-1；OptiMOS 2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated

文件：347.1 Kbytes 页数：10 Pages

Infineon

英飞凌

N-Channel 20-V (D-S)175 C MOSFET

文件：1.46925 Mbytes 页数：6 Pages

VBSEMI

微碧半导体