丝印：05N06；Package：TO-126-FJ；NPN LOW Vce(sat) TRANSISTOR

APPLICATIONS  Switching and muting  Battery charger  Supply line switching circuits FEATURES  Epitaxial silicon  Low VCE(sat) ，high current  RoHS product

文件：311.21 Kbytes 页数：5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印：05N06；Package：SOT-23-6；N-Channel Enhancement Mode Power MOSFET

Description The G050N06LL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：764.54 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：05N06；Package：SOT-23-6；N-Channel Enhancement Mode Power MOSFET

Description The G050N06LLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：900.46 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：05N06；Package：SOP-8Dual；Dual N-Channel Enhancement Mode Power MOSFET

Description The G05N06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch lDC/DC converters

文件：928.91 Kbytes 页数：6 Pages

GOFORD

谷峰半导体