OptiMOSTM3 Power-Transistor

文件：507.87 Kbytes 页数：11 Pages

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丝印：041N12N；Package：PG-TO262-3；N-channel, normal level

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant, halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switch

文件：878.72 Kbytes 页数：11 Pages

INFINEON

英飞凌

丝印：041N12N；Package：PG-TO220-3；N-channel, normal level

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant, halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switch

文件：878.72 Kbytes 页数：11 Pages

INFINEON

英飞凌

丝印：041N12N；Package：PG-TO220-3；OptiMOSTM3 Power-Transistor

文件：507.87 Kbytes 页数：11 Pages

INFINEON

英飞凌

丝印：041N12N；Package：PG-TO262-3；OptiMOSTM3 Power-Transistor

文件：507.87 Kbytes 页数：11 Pages

INFINEON

英飞凌