丝印：040N10NS；Package：DFN5060-8L；100V N-Channel Enhancement Mode MOSFET

Feature  RDS(ON)

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PANJIT

強茂

N-Channel Enhancement Mode Power MOSFET

Description The GT040N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.05967 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT040N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：938.07 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

MOSFET ??Power, Dual N-Channel 100 V, 39 m, 21 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • NVMFWD040N10MCL − Wettable Flank Products • These Devices are Pb−Free, Halogen Free/BFR Free, Berylliu

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ONSEMI

安森美半导体