丝印：039N10NS；Package：DFN5060X-8L；100V N-Channel Enhancement Mode MOSFET

Feature  RDS(ON),max

文件：1.04518 Mbytes 页数：6 Pages

PANJIT

強茂

丝印：039N10N5；Package：PG-TO220-3；OptiMOS짧5 Power-Transistor, 100 V

文件：1.54781 Mbytes 页数：11 Pages

Infineon

英飞凌

NCE N-Channel Super Trench II Power MOSFET

Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal

文件：339.09 Kbytes 页数：7 Pages

NCEPOWER

新洁能

NCE N-Channel Super Trench II Power MOSFET

Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal

文件：339.09 Kbytes 页数：7 Pages

NCEPOWER

新洁能

NCE N-Channel Super Trench II Power MOSFET

Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal

文件：339.09 Kbytes 页数：7 Pages

NCEPOWER

新洁能