OptiMOSTM3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：340.97 Kbytes 页数：9 Pages

INFINEON

英飞凌

OptiMOSTM3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：283.44 Kbytes 页数：9 Pages

INFINEON

英飞凌

丝印：030N10N；Package：PG-TO220-FP；OptiMOSTM3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：283.44 Kbytes 页数：9 Pages

INFINEON

英飞凌

丝印：030N10N；Package：PG-TO220-FP；OptiMOSTM3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：340.97 Kbytes 页数：9 Pages

INFINEON

英飞凌

OptiMOS짧5 Power-Transistor, 100 V

文件：1.69373 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：030N10NS；Package：PG-TO220-3；MOSFET StrongIRFET™ 2 Power‑Transistor, 100 V

Features • Optimized for a wide range of applications • N‑channel, normal level • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：825.14 Kbytes 页数：11 Pages

INFINEON

英飞凌

丝印：030N10N6；Package：PG-TDSON-8FL；OptiMOSTM 6 Power-Transistor, 100 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching and synchronous rectification •

文件：1.32902 Mbytes 页数：12 Pages

INFINEON

英飞凌

丝印：030N10NS；Package：PG-TO220；StrongIRFETTM 2 Power-Transistor

文件：1.03348 Mbytes 页数：10 Pages

INFINEON

英飞凌