丝印：028N06NS；Package：PG-TO252-3；StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：897.82 Kbytes 页数：11 Pages

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丝印：028N06NS；Package：PG-TDSON-8；OptiMOSTM Power-Transistor, 60 V

文件：1.12279 Mbytes 页数：12 Pages

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OptiMOSTM3 Power-Transistor

文件：567.65 Kbytes 页数：9 Pages

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New OptiMOS??40V and 60V

文件：1.02174 Mbytes 页数：2 Pages

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OptiMOSTM Power-Transistor, 60 V

Features • Dual-side cooled package with lowest Junction-top thermal resistance • 175°C rated • Optimized for high performance SMPS, e.g. sync. rec. • 100 avalanche tested • Superior thermal resistance • N-channel • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-

文件：1.02524 Mbytes 页数：11 Pages

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