丝印：025N10N5；Package：PG-HSOG-8-1；OptiMOSTM 5 Power-Transistor, 100 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Ideal for high frequency switching and sync. rec.

文件：1.32142 Mbytes 页数：11 Pages

Infineon

英飞凌

N-Channel MOSFET uses advanced SGT technology

文件：862.25 Kbytes 页数：4 Pages

DOINGTER

杜因特

N-Channel 100 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • 100 Rg Tested • 100 Avalanche Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

文件：469.83 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

TO-251AA-3

Infineon

英飞凌

上传：深圳市宇集芯电子有限公司

N/A

5000

上传：深圳市亿智腾科技有限公司