丝印：011N04NS；Package：PG-TO263-3；StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.04643 Mbytes 页数：11 Pages

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丝印：011N04NS；Package：PG-TO220-3；MOSFET StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：985.64 Kbytes 页数：11 Pages

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OptiMOS3 Power Transistor

Features • MOSFET for ORing and Uninterruptible Power Supply • Qualified according to JEDEC1) for target applications • N-channel • Logic level • Ultra-low on-resistance RDS(on) • 100 Avalanche tested • pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：507.24 Kbytes 页数：9 Pages

Infineon

英飞凌

OptiMOS3 Power Transistor

Features • MOSFET for ORing and Uninterruptible Power Supply • Qualified according to JEDEC1) for target applications • N-channel • Logic level • Ultra-low on-resistance RDS(on) • 100 Avalanche tested • pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：507.24 Kbytes 页数：9 Pages

Infineon

英飞凌

OptiMOS3 Power-Transistor

Features • MOSFET for ORing and Uniterruptible Power Supply • Qualified according to JEDEC1) for target applications • N-channel • Normal level • Ultra-low on-resistance R DS(on) • Avalanche rated • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：497.34 Kbytes 页数：9 Pages

Infineon

英飞凌