OptiMOSTM Power-MOSFET

Features • Optimized for high performance Buck converter • Very low on-resistance R DS(on) @ V GS=4.5 V • 100 avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according

文件：760.86 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：010NE2LS；Package：PG-TDSON-8；OptiMOSTM Power-MOSFET

Features • Optimized for high performance Buck converter • Very low on-resistance R DS(on) @ V GS=4.5 V • 100 avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according

文件：760.86 Kbytes 页数：10 Pages

Infineon

英飞凌

n-Channel Power MOSFET

文件：1.53756 Mbytes 页数：12 Pages

Infineon

英飞凌

OptiMOSTM Power-MOSFET

Features • Optimized for high performance Buck converter • Very low on-resistance R DS(on) @ V GS=4.5 V • 100 avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according

文件：760.86 Kbytes 页数：10 Pages

Infineon

英飞凌

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current –ID=100A@ TC=25℃ ·Drain Source Voltage- VDSS= 80V(Min) APPLICATIONS ·Synchronous Rectification in SMPS ·Switching converters,motor driver,relay driver ·Power Tools ·UPS ·Motor Control

文件：381.48 Kbytes 页数：3 Pages

ISC

无锡固电