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STW14NM50

N-CHANNEL 550V - 0.32ohm - 14A TO-247 MDmesh Power MOSFET

DESCRIPTION TheMDmesh™isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH™horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoptionof

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STW14NM50FD

N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??Power MOSFET with FAST DIODE

Description TheFDmesh™associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,inparticularZVSphase-shiftconverters. Generalfeatures ■100avalanchetested ■Highdv/dta

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STW14NM50FD

N-channel 500V - 0.32廓 - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh??Power MOSFET (with fast diode)

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

14NM50N

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

STB14NM50N

N-channel500V,0.28廓typ.,12AMDmesh??IIPowerMOSFETinD짼PAK,DPAK,TO-220FP,I짼PAKandTO-220packages

Description ThesedevicesareN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB14NM50N

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

STD14NM50N

N-channel500V,0.28廓typ.,12AMDmesh??IIPowerMOSFETinD짼PAK,DPAK,TO-220FP,I짼PAKandTO-220packages

Description ThesedevicesareN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STD14NM50N

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STD14NM50N

N-channel500V,0.28廓typ.,12AMDmesh??IIPowerMOSFETinD짼PAK,DPAK,TO-220FP,I짼PAKandTO-220packages

Description ThesedevicesareN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STD14NM50NAG

Automotive-gradeN-channel500V,0.285typ.,12AMDmeshTMIIPowerMOSFETinaDPAKpackage

Features •AEC-Q101qualified •100avalanchetested •Lowinputcapacitanceandgatecharge •Lowgateinputresistance Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthesecondgeneration ofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesavertical

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STF14NM50N

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STF14NM50N

N-channel500V,0.28廓typ.,12AMDmesh??IIPowerMOSFETinD짼PAK,DPAK,TO-220FP,I짼PAKandTO-220packages

Description ThesedevicesareN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STI14NM50N

iscN-ChannelMosfetTransistor

•FEATURES •DrainCurrentID=12A@TC=25℃ •DrainSourceVoltage- :VDSS=500V(Min) •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STI14NM50N

N-channel500V,0.28廓typ.,12AMDmesh??IIPowerMOSFETinD짼PAK,DPAK,TO-220FP,I짼PAKandTO-220packages

Description ThesedevicesareN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP14NM50N

N-channel500V,0.28廓typ.,12AMDmesh??IIPowerMOSFETinD짼PAK,DPAK,TO-220FP,I짼PAKandTO-220packages

Description ThesedevicesareN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP14NM50N

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    STW14NM50

  • 功能描述:

    MOSFET N-Ch 500 Volt 14 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ST
07+/08+
TO-247-3
197
询价
ST
23+
TO-247
8795
询价
ST
17+
TO-3P
1000
原装现货热卖
询价
ST
2020+
TO-247
16800
绝对原装进口现货,假一赔十,价格优势!?
询价
22+
NA
3000
加我QQ或微信咨询更多详细信息,
询价
ST
22+
TO2473
9000
原厂渠道,现货配单
询价
ST意法半导体
24+23+
TO247
12580
16年电子元件现货供应商 终端BOM表可配单提供样品
询价
STMicroelectronics
2022+
TO-247-3
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
ST/意法半导体
22+
TO-247
25000
只做原装进口现货,专注配单
询价
isc
2024
TO-247
5000
国产品牌isc,可替代原装
询价
更多STW14NM50供应商 更新时间2024-6-8 15:30:00