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STW22NM60N

N-channel 600 V, 0.2 廓, 16 A MDmesh??II Power MOSFET

Description ThesedevicesaremadeusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STW22NM60N

Isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STB22NM60

N-CHANNEL600V-0.19ohm-22ATO-220/FP/D2PAK/I2PAK/TO-247MDmesh?줡owerMOSFET

DESCRIPTION ThisimprovedversionofMDmesh™whichisbasedonMultipleDrainprocessrepresentsthenewbenchmarkinhighvoltageMOSFETs.Theresultingproductexhibitsevenloweron-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.TheadoptionoftheCompany’spropr

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB22NM60N

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STB22NM60N

N-channel600V,0.2廓,16AMDmesh??IIPowerMOSFET

Description ThesedevicesaremadeusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STF22NM60

N-CHANNEL600V-0.19ohm-22ATO-220/FP/D2PAK/I2PAK/TO-247MDmesh?줡owerMOSFET

DESCRIPTION ThisimprovedversionofMDmesh™whichisbasedonMultipleDrainprocessrepresentsthenewbenchmarkinhighvoltageMOSFETs.Theresultingproductexhibitsevenloweron-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.TheadoptionoftheCompany’spropr

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STF22NM60N

N-channel600V,0.2廓,16AMDmesh??IIPowerMOSFET

Description ThesedevicesaremadeusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STF22NM60N

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STF22NM60N

N-Channel650-V(D-S)SuperJunctionMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

STF22NM60ND

Automotive-gradeN-channel600V,0.17??typ.,17AFDmesh??IIPowerMOSFETinaTO-220FPpackage

Description ThisFDmesh™IIPowerMOSFETwithfastrecoverybodydiodeisproducedusingMDmesh™IItechnology.Utilizinganewstriplayoutverticalstructure,thisdevicefeatureslowon-resistanceandsuperiorswitchingperformance.ItisidealforbridgetopologiesandZVSphase-shiftconverter

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STI22NM60N

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STI22NM60N

N-channel600V,0.2廓,16AMDmesh??IIPowerMOSFET

Description ThesedevicesaremadeusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP22NM60

N-CHANNEL600V-0.19ohm-22ATO-220/FP/D2PAK/I2PAK/TO-247MDmesh?줡owerMOSFET

DESCRIPTION ThisimprovedversionofMDmesh™whichisbasedonMultipleDrainprocessrepresentsthenewbenchmarkinhighvoltageMOSFETs.Theresultingproductexhibitsevenloweron-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.TheadoptionoftheCompany’spropr

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP22NM60N

N-channel600V,0.2廓,16AMDmesh??IIPowerMOSFET

Description ThesedevicesaremadeusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP22NM60N

IscN-ChannelMOSFETTransistor

•FEATURES •Lowinputcapacitanceandgatecharge •Lowgateinputresistances •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STW22NM60

N-CHANNEL600V-0.19ohm-22ATO-220/FP/D2PAK/I2PAK/TO-247MDmesh?줡owerMOSFET

DESCRIPTION ThisimprovedversionofMDmesh™whichisbasedonMultipleDrainprocessrepresentsthenewbenchmarkinhighvoltageMOSFETs.Theresultingproductexhibitsevenloweron-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.TheadoptionoftheCompany’spropr

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

详细参数

  • 型号:

    STW22NM60N

  • 功能描述:

    MOSFET N-channel 600 V 0.190ohms 16A Mdmesh

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
STMICRO
2305+
原厂封装
8900
15年芯片行业经验/只供原装正品:0755-83267371邹小姐
询价
STMicroelectronics
18+
NA
3000
进口原装正品优势供应QQ3171516190
询价
ST
23+
TO-247
8650
受权代理!全新原装现货特价热卖!
询价
VB
2019
TO-247
55000
绝对原装正品假一罚十!
询价
ST
2020+
TO-247
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
ST
2022+
10
全新原装 货期两周
询价
STM原厂目录
23+
TO-247
28500
授权代理直销,原厂原装现货,假一罚十,特价销售
询价
ST
20+
TO-247
25000
全新原装现货,假一赔十
询价
ST
21+
TO-247
25
原装现货假一赔十
询价
ST
22+
TO-247
28600
只做原装正品现货假一赔十一级代理
询价
更多STW22NM60N供应商 更新时间2024-6-18 9:00:00