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STF22NM60ND

Automotive-grade N-channel 600 V, 0.17 ??typ., 17 A FDmesh??II Power MOSFET in a TO-220FP package

Description ThisFDmesh™IIPowerMOSFETwithfastrecoverybodydiodeisproducedusingMDmesh™IItechnology.Utilizinganewstriplayoutverticalstructure,thisdevicefeatureslowon-resistanceandsuperiorswitchingperformance.ItisidealforbridgetopologiesandZVSphase-shiftconverter

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB22NM60

N-CHANNEL600V-0.19ohm-22ATO-220/FP/D2PAK/I2PAK/TO-247MDmesh?줡owerMOSFET

DESCRIPTION ThisimprovedversionofMDmesh™whichisbasedonMultipleDrainprocessrepresentsthenewbenchmarkinhighvoltageMOSFETs.Theresultingproductexhibitsevenloweron-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.TheadoptionoftheCompany’spropr

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB22NM60N

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STB22NM60N

N-channel600V,0.2廓,16AMDmesh??IIPowerMOSFET

Description ThesedevicesaremadeusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STF22NM60

N-CHANNEL600V-0.19ohm-22ATO-220/FP/D2PAK/I2PAK/TO-247MDmesh?줡owerMOSFET

DESCRIPTION ThisimprovedversionofMDmesh™whichisbasedonMultipleDrainprocessrepresentsthenewbenchmarkinhighvoltageMOSFETs.Theresultingproductexhibitsevenloweron-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.TheadoptionoftheCompany’spropr

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STF22NM60N

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STF22NM60N

N-channel600V,0.2廓,16AMDmesh??IIPowerMOSFET

Description ThesedevicesaremadeusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STF22NM60N

N-Channel650-V(D-S)SuperJunctionMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

STI22NM60N

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STI22NM60N

N-channel600V,0.2廓,16AMDmesh??IIPowerMOSFET

Description ThesedevicesaremadeusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP22NM60

N-CHANNEL600V-0.19ohm-22ATO-220/FP/D2PAK/I2PAK/TO-247MDmesh?줡owerMOSFET

DESCRIPTION ThisimprovedversionofMDmesh™whichisbasedonMultipleDrainprocessrepresentsthenewbenchmarkinhighvoltageMOSFETs.Theresultingproductexhibitsevenloweron-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.TheadoptionoftheCompany’spropr

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP22NM60N

IscN-ChannelMOSFETTransistor

•FEATURES •Lowinputcapacitanceandgatecharge •Lowgateinputresistances •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STP22NM60N

N-channel600V,0.2廓,16AMDmesh??IIPowerMOSFET

Description ThesedevicesaremadeusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STW22NM60

N-CHANNEL600V-0.19ohm-22ATO-220/FP/D2PAK/I2PAK/TO-247MDmesh?줡owerMOSFET

DESCRIPTION ThisimprovedversionofMDmesh™whichisbasedonMultipleDrainprocessrepresentsthenewbenchmarkinhighvoltageMOSFETs.Theresultingproductexhibitsevenloweron-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.TheadoptionoftheCompany’spropr

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STW22NM60N

N-channel600V,0.2廓,16AMDmesh??IIPowerMOSFET

Description ThesedevicesaremadeusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STW22NM60N

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

供应商型号品牌批号封装库存备注价格
STMicroelectronics
21+
TO-220FP
1000
进口原装!长期供应!绝对优势价格(诚信经营)!!
询价
22+
NA
3000
加我QQ或微信咨询更多详细信息,
询价
ST
22+
TO2203
9000
原厂渠道,现货配单
询价
STMicroelectronics
2022+
TO-220-3 整包
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
ST
原厂原封
93480
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
ST
23+
TO2203
8000
只做原装现货
询价
ST原装
22+23+
TO-220F
22398
绝对原装正品全新进口深圳现货
询价
ST原装
19+
TO-220F
9860
一级代理
询价
ST/意法
TO-220F
265209
假一罚十,原包原标签,常备现货
询价
ST/意法
23+
TO-220F
50000
全新原装正品现货,支持订货
询价
更多STF22NM60ND供应商 更新时间2024-6-19 14:42:00