首页 >STF22NM60ND>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
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STF22NM60ND | Automotive-grade N-channel 600 V, 0.17 ??typ., 17 A FDmesh??II Power MOSFET in a TO-220FP package Description ThisFDmesh™IIPowerMOSFETwithfastrecoverybodydiodeisproducedusingMDmesh™IItechnology.Utilizinganewstriplayoutverticalstructure,thisdevicefeatureslowon-resistanceandsuperiorswitchingperformance.ItisidealforbridgetopologiesandZVSphase-shiftconverter | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | |
N-CHANNEL600V-0.19ohm-22ATO-220/FP/D2PAK/I2PAK/TO-247MDmesh?줡owerMOSFET DESCRIPTION ThisimprovedversionofMDmesh™whichisbasedonMultipleDrainprocessrepresentsthenewbenchmarkinhighvoltageMOSFETs.Theresultingproductexhibitsevenloweron-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.TheadoptionoftheCompany’spropr | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel600V,0.2廓,16AMDmesh??IIPowerMOSFET Description ThesedevicesaremadeusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-CHANNEL600V-0.19ohm-22ATO-220/FP/D2PAK/I2PAK/TO-247MDmesh?줡owerMOSFET DESCRIPTION ThisimprovedversionofMDmesh™whichisbasedonMultipleDrainprocessrepresentsthenewbenchmarkinhighvoltageMOSFETs.Theresultingproductexhibitsevenloweron-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.TheadoptionoftheCompany’spropr | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel600V,0.2廓,16AMDmesh??IIPowerMOSFET Description ThesedevicesaremadeusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-Channel650-V(D-S)SuperJunctionMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel600V,0.2廓,16AMDmesh??IIPowerMOSFET Description ThesedevicesaremadeusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-CHANNEL600V-0.19ohm-22ATO-220/FP/D2PAK/I2PAK/TO-247MDmesh?줡owerMOSFET DESCRIPTION ThisimprovedversionofMDmesh™whichisbasedonMultipleDrainprocessrepresentsthenewbenchmarkinhighvoltageMOSFETs.Theresultingproductexhibitsevenloweron-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.TheadoptionoftheCompany’spropr | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
IscN-ChannelMOSFETTransistor •FEATURES •Lowinputcapacitanceandgatecharge •Lowgateinputresistances •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel600V,0.2廓,16AMDmesh??IIPowerMOSFET Description ThesedevicesaremadeusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-CHANNEL600V-0.19ohm-22ATO-220/FP/D2PAK/I2PAK/TO-247MDmesh?줡owerMOSFET DESCRIPTION ThisimprovedversionofMDmesh™whichisbasedonMultipleDrainprocessrepresentsthenewbenchmarkinhighvoltageMOSFETs.Theresultingproductexhibitsevenloweron-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.TheadoptionoftheCompany’spropr | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-channel600V,0.2廓,16AMDmesh??IIPowerMOSFET Description ThesedevicesaremadeusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
STMicroelectronics |
21+ |
TO-220FP |
1000 |
进口原装!长期供应!绝对优势价格(诚信经营)!! |
询价 | ||
22+ |
NA |
3000 |
加我QQ或微信咨询更多详细信息, |
询价 | |||
ST |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
询价 | ||
STMicroelectronics |
2022+ |
TO-220-3 整包 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
ST |
原厂原封 |
93480 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ST |
23+ |
TO2203 |
8000 |
只做原装现货 |
询价 | ||
ST原装 |
22+23+ |
TO-220F |
22398 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ST原装 |
19+ |
TO-220F |
9860 |
一级代理 |
询价 | ||
ST/意法 |
TO-220F |
265209 |
假一罚十,原包原标签,常备现货 |
询价 | |||
ST/意法 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
询价 |
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