首页 >STF24NM65N>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
STF24NM65N | N-channel 650 V - 0.16 廓 - 19 A - TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh??Power MOSFET Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | |
STF24NM65N | isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
N-channel650V-0.16廓-19A-TO-220-TO-220FP-D2PAKI2PAK-TO-247secondgenerationMDmesh??PowerMOSFET Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor DESCRIPTION •LowDrain-SourceOn-Resistance FEATURES •DrainCurrent–ID=19A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=190mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandr | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel650V-0.16廓-19A-TO-220-TO-220FP-D2PAKI2PAK-TO-247secondgenerationMDmesh??PowerMOSFET Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel650V-0.16廓-19A-TO-220-TO-220FP-D2PAKI2PAK-TO-247secondgenerationMDmesh??PowerMOSFET Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel650V-0.16廓-19A-TO-220-TO-220FP-D2PAKI2PAK-TO-247secondgenerationMDmesh??PowerMOSFET Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS |
详细参数
- 型号：
STF24NM65N
- 功能描述：
MOSFET N-Channel 650V 0.16 Ohms 19A
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
2020+ |
TO220F |
18600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
ST |
23+ |
TO220F |
6996 |
只做原装正品现货 |
询价 | ||
ST/意法 |
2024+实力库存 |
TO220 |
45 |
只做原厂渠道 可追溯货源 |
询价 | ||
ST |
17+ |
TO-220F |
2500 |
原装现货热卖 |
询价 | ||
ST/进口原 |
17+ |
TO-220F |
6200 |
询价 | |||
ST |
08+(pbfree) |
TO220ISOFULLPACK |
8866 |
询价 | |||
ST |
2016+ |
TO-220F |
6528 |
房间原装进口现货假一赔十 |
询价 | ||
ST |
24+ |
TO-220F |
5000 |
只做原装公司现货 |
询价 | ||
ST |
23+ |
TO-220F |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
ST全系列 |
22+23+ |
TO-220F |
26332 |
绝对原装正品全新进口深圳现货 |
询价 |
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