首页 >STF14NM50N>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
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STF14NM50N | N-channel 500 V, 0.28 廓 typ., 12 A MDmesh??II Power MOSFET in D짼PAK, DPAK, TO-220FP, I짼PAK and TO-220 packages Description ThesedevicesareN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | |
STF14NM50N | isc N-Channel Mosfet Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-channel500V,0.28廓typ.,12AMDmesh??IIPowerMOSFETinD짼PAK,DPAK,TO-220FP,I짼PAKandTO-220packages Description ThesedevicesareN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-channel500V,0.28廓typ.,12AMDmesh??IIPowerMOSFETinD짼PAK,DPAK,TO-220FP,I짼PAKandTO-220packages Description ThesedevicesareN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel500V,0.28廓typ.,12AMDmesh??IIPowerMOSFETinD짼PAK,DPAK,TO-220FP,I짼PAKandTO-220packages Description ThesedevicesareN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
Automotive-gradeN-channel500V,0.285typ.,12AMDmeshTMIIPowerMOSFETinaDPAKpackage Features •AEC-Q101qualified •100avalanchetested •Lowinputcapacitanceandgatecharge •Lowgateinputresistance Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthesecondgeneration ofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesavertical | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
iscN-ChannelMosfetTransistor •FEATURES •DrainCurrentID=12A@TC=25℃ •DrainSourceVoltage- :VDSS=500V(Min) •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel500V,0.28廓typ.,12AMDmesh??IIPowerMOSFETinD짼PAK,DPAK,TO-220FP,I짼PAKandTO-220packages Description ThesedevicesareN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-channel500V,0.28廓typ.,12AMDmesh??IIPowerMOSFETinD짼PAK,DPAK,TO-220FP,I짼PAKandTO-220packages Description ThesedevicesareN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNEL550V-0.32ohm-14ATO-247MDmeshPowerMOSFET DESCRIPTION TheMDmesh™isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH™horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoptionof | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-channel500V-0.32廓-12A-TO-220/FP-D2/I2PAK-TO-247FDmesh??PowerMOSFET(withfastdiode) | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PAK/TO-247FDmesh??PowerMOSFETwithFASTDIODE Description TheFDmesh™associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,inparticularZVSphase-shiftconverters. Generalfeatures ■100avalanchetested ■Highdv/dta | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS |
详细参数
- 型号:
STF14NM50N
- 功能描述:
MOSFET N-Ch 500V 0.246 Ohm 12A Mdmesh 2 PWR MO
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
22+ |
TO-220 |
10309 |
原装正品现货 可开增值税发票 |
询价 | ||
STMicroelectronics |
24+ |
TO-220FP |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
STM |
15+ |
原厂原装 |
3050 |
进口原装现货假一赔十 |
询价 | ||
STMICRO |
2305+ |
原厂封装 |
8900 |
15年芯片行业经验/只供原装正品:0755-83267371邹小姐 |
询价 | ||
ST意法 |
2020+ |
TO-220F |
9500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
STM |
21+ |
TO-220F |
4865 |
专营原装正品现货,当天发货,可开发票! |
询价 | ||
ST/意法 |
22+ |
TO-220FP-3 |
20000 |
原厂原装现货 |
询价 | ||
ST/意法 |
21+ |
TO-220FP-3 |
20000 |
只做原装,假一罚十 |
询价 | ||
STM |
22+ |
1000 |
TO-220FP-3 |
询价 | |||
ST |
21+ |
TO-220F |
7000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 |
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