首页 >STI14NM50N>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
STI14NM50N | isc N-Channel Mosfet Transistor •FEATURES •DrainCurrentID=12A@TC=25℃ •DrainSourceVoltage- :VDSS=500V(Min) •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
STI14NM50N | N-channel 500 V, 0.28 廓 typ., 12 A MDmesh??II Power MOSFET in D짼PAK, DPAK, TO-220FP, I짼PAK and TO-220 packages Description ThesedevicesareN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | |
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-channel500V,0.28廓typ.,12AMDmesh??IIPowerMOSFETinD짼PAK,DPAK,TO-220FP,I짼PAKandTO-220packages Description ThesedevicesareN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel500V,0.28廓typ.,12AMDmesh??IIPowerMOSFETinD짼PAK,DPAK,TO-220FP,I짼PAKandTO-220packages Description ThesedevicesareN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel500V,0.28廓typ.,12AMDmesh??IIPowerMOSFETinD짼PAK,DPAK,TO-220FP,I짼PAKandTO-220packages Description ThesedevicesareN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
Automotive-gradeN-channel500V,0.285typ.,12AMDmeshTMIIPowerMOSFETinaDPAKpackage Features •AEC-Q101qualified •100avalanchetested •Lowinputcapacitanceandgatecharge •Lowgateinputresistance Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthesecondgeneration ofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesavertical | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel500V,0.28廓typ.,12AMDmesh??IIPowerMOSFETinD짼PAK,DPAK,TO-220FP,I짼PAKandTO-220packages Description ThesedevicesareN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel500V,0.28廓typ.,12AMDmesh??IIPowerMOSFETinD짼PAK,DPAK,TO-220FP,I짼PAKandTO-220packages Description ThesedevicesareN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-CHANNEL550V-0.32ohm-14ATO-247MDmeshPowerMOSFET DESCRIPTION TheMDmesh™isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH™horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoptionof | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel500V-0.32廓-12A-TO-220/FP-D2/I2PAK-TO-247FDmesh??PowerMOSFET(withfastdiode) | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PAK/TO-247FDmesh??PowerMOSFETwithFASTDIODE Description TheFDmesh™associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,inparticularZVSphase-shiftconverters. Generalfeatures ■100avalanchetested ■Highdv/dta | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
22+ |
TO220 |
5000 |
原厂原装现货 |
询价 | ||
ST |
22+23+ |
TO220 |
21306 |
绝对原装正品全新进口深圳现货 |
询价 | ||
瑞士意法半导体 |
报价为准 |
STN |
1000 |
国外订货7-10个工作日 |
询价 | ||
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | ||||
STM |
1809+ |
TO-262 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
ST |
2021++ |
原厂正品 |
9240 |
原装现货 假一赔百 |
询价 | ||
STMicroelectronics |
21+ |
Powermite |
33000 |
专业分立半导体,原装渠道正品现货 |
询价 | ||
22+ |
NA |
910 |
加我QQ或微信咨询更多详细信息, |
询价 | |||
ST |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原厂渠道,现货配单 |
询价 | ||
ST/意法 |
2122+ |
TO220 |
35000 |
全新原装正品,优势渠道可含税,假一赔十 |
询价 |
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