首页 >STW20N65M5>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
STW20N65M5 | N-channel 650 V, 0.160 廓 typ., 18 A MDmesh??V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages Features ■WorldwidebestRDS(on)*area ■HigherVDSSratingandhighdv/dtcapability ■Excellentswitchingperformance ■100avalanchetested Applications ■Switchingapplications Description ThesedevicesareN-channelMDmesh™V PowerMOSFETsbasedonaninnovative proprietaryve | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | |
STW20N65M5 | isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
STW20N65M5 | N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | |
N-channel650V,0.160typ.,18AMDmeshVPowerMOSFETinD2PAK,I2PAK | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel650V,0.160廓typ.,18AMDmesh??VPowerMOSFETinD2PAK,I2PAK,TO-220andTO-247packages Features ■WorldwidebestRDS(on)*area ■HigherVDSSratingandhighdv/dtcapability ■Excellentswitchingperformance ■100avalanchetested Applications ■Switchingapplications Description ThesedevicesareN-channelMDmesh™V PowerMOSFETsbasedonaninnovative proprietaryve | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel650V,0.160廓typ.,18AMDmesh??VPowerMOSFETinD2PAK,I2PAK,TO-220andTO-247packages Features ■WorldwidebestRDS(on)*area ■HigherVDSSratingandhighdv/dtcapability ■Excellentswitchingperformance ■100avalanchetested Applications ■Switchingapplications Description ThesedevicesareN-channelMDmesh™V PowerMOSFETsbasedonaninnovative proprietaryve | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel650V,0.160Ωtyp.,18AMDmeshM5PowerMOSFETsinTO-220FP,I²PAKFPandTO-3PFpackages Features ExtremelylowRDS(on) Lowgatechargeandinputcapacitance Excellentswitchingperformance 100avalanchetested Applications Switchingapplications Description ThesedevicesareN-channelPowerMOSFET basedontheMDmesh™M5innovativevertical processtechnology | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel650V,0.160Ωtyp.,18AMDmeshM5PowerMOSFETsinTO-220FP,I²PAKFPandTO-3PFpackages Features ExtremelylowRDS(on) Lowgatechargeandinputcapacitance Excellentswitchingperformance 100avalanchetested Applications Switchingapplications Description ThesedevicesareN-channelPowerMOSFET basedontheMDmesh™M5innovativevertical processtechnology | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel650V,0.160Ωtyp.,18AMDmeshM5PowerMOSFETsinTO-220FP,I²PAKFPandTO-3PFpackages Features ExtremelylowRDS(on) Lowgatechargeandinputcapacitance Excellentswitchingperformance 100avalanchetested Applications Switchingapplications Description ThesedevicesareN-channelPowerMOSFET basedontheMDmesh™M5innovativevertical processtechnology | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel650V,0.160廓typ.,18AMDmesh??VPowerMOSFETinD2PAK,I2PAK,TO-220andTO-247packages Features ■WorldwidebestRDS(on)*area ■HigherVDSSratingandhighdv/dtcapability ■Excellentswitchingperformance ■100avalanchetested Applications ■Switchingapplications Description ThesedevicesareN-channelMDmesh™V PowerMOSFETsbasedonaninnovative proprietaryve | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel650V,0.160typ.,18AMDmeshVPowerMOSFETinD2PAK,I2PAK | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel650V,0.160typ.,18AMDmeshVPowerMOSFETinD2PAK,I2PAK | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel650V,0.160廓typ.,18AMDmesh??VPowerMOSFETinD2PAK,I2PAK,TO-220andTO-247packages Features ■WorldwidebestRDS(on)*area ■HigherVDSSratingandhighdv/dtcapability ■Excellentswitchingperformance ■100avalanchetested Applications ■Switchingapplications Description ThesedevicesareN-channelMDmesh™V PowerMOSFETsbasedonaninnovative proprietaryve | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS |
详细参数
- 型号：
STW20N65M5
- 功能描述：
MOSFET N-Ch 650V 0.168 Ohm 18A Mdmesh V
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STMICRO |
2305+ |
原厂封装 |
8900 |
15年芯片行业经验/只供原装正品:0755-83267371邹小姐 |
询价 | ||
ST/意法 |
2024+实力库存 |
TO247 |
45 |
只做原厂渠道 可追溯货源 |
询价 | ||
ST/意法 |
21+ |
TO247 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
ST/意法半导体 |
22+ |
TO-247-3 |
6006 |
原装正品现货 可开增值税发票 |
询价 | ||
STMicroelectronics |
18+ |
NA |
3000 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
ST |
23+ |
TO-247 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
ST |
22+23+ |
TO-247 |
15085 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ST原装 |
19+ |
TO-247 |
9860 |
一级代理 |
询价 | ||
VB |
2019 |
TO-247 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
ST |
2020+ |
TO-247 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 |
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