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STB20N65M5中文资料PDF规格书
STB20N65M5规格书详情
Features
■ Worldwide best RDS(on) * area
■ Higher VDSS rating and high dv/dt capability
■ Excellent switching performance
■ 100 avalanche tested
Applications
■ Switching applications
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency
产品属性
- 型号:
STB20N65M5
- 功能描述:
MOSFET N-Ch 650V 18A Mdmesh V 0.19Ohm
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
2022+ |
TO-263-3 |
8000 |
只做原装支持实单,有单必成。 |
询价 | ||
ST |
D2PAK |
58209 |
16余年资质 绝对原盒原盘 更多数量 |
询价 | |||
ST-意法半导体 |
24+25+/26+27+ |
TO-263-3 |
9328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
ST/意法半导体 |
21+ |
TO-263-3 |
6000 |
原装现货 |
询价 | ||
ST意法 |
N/A |
22+ |
569888 |
原装正品现货,支持BOM配单! |
询价 | ||
ST/意法半导体 |
23+ |
TO-263-3 |
30000 |
原装正品公司现货,假一赔十! |
询价 | ||
ST/意法 |
21+ |
TO263-3 |
2000 |
原装正品,支持实单。 |
询价 | ||
ST |
1845+ |
TO263 |
5790 |
只做原装!量大可以订货!特价支持实单! |
询价 | ||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ST |
TO-263 |
899933 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 |