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10N120BN	文件：81.67 Kbytes Page：7 Pages	35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
10N120BN	文件：217.6 Kbytes Page：8 Pages	35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
10N120BND	文件：82.69 Kbytes Page：7 Pages	35A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
10N120BND	文件：110.92 Kbytes Page：8 Pages	35A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
BRG10N120D	文件：770.08 Kbytes Page：6 Pages	Insulated-GateBipolarTransistorinaTO-3PPlasticPackage	FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司	FOSHAN
HGTG10N120BN	文件：201.1 Kbytes Page：8 Pages	35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTG10N120BN	文件：217.6 Kbytes Page：8 Pages	35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTG10N120BN	文件：81.67 Kbytes Page：7 Pages	35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTG10N120BND	文件：82.69 Kbytes Page：7 Pages	35A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTG10N120BND	文件：110.92 Kbytes Page：8 Pages	35A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTP10N120BN	文件：217.6 Kbytes Page：8 Pages	35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTP10N120BN	文件：81.67 Kbytes Page：7 Pages	35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTP10N120BN	文件：201.1 Kbytes Page：8 Pages	35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HM10N120T	文件：1.25182 Mbytes Page：8 Pages	1200V/10ATrenchFieldStopIGBT	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司	HMSEMI
MPCK10N120A	文件：329.45 Kbytes Page：5 Pages	ZeroReverseRecoveryCurrent Features ZeroReverseRecoveryCurrent ZeroForwardRecoveryVoltage Temperature-independentSwitchingBehavior PositiveTemperatureCoefficientonVF High-speedswitchingpossible Highsurgecurrentcapability Applications SwitchModePowerSupply(SMPS) MotorDrives 	FS First Silicon Co., Ltd	FS
SCT10N120	文件：791.79 Kbytes Page：14 Pages	HighvoltageDC-DCconverters	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
SCT10N120AG	文件：238.62 Kbytes Page：14 Pages	Automotive-gradesiliconcarbidePowerMOSFET1200V,12A,520mΩ(typ.,TJ=150°C)inanHiP247package Features •AEC-Q101qualified •Verytightvariationofon-resistancevs.temperature •Veryhighoperatingtemperaturecapability(TJ=200°C) •Veryfastandrobustintrinsicbodydiode •Lowcapacitance Applications •Motordrives •EVchargers •HighvoltageDC-DCconverters •Swi	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
SGH10N120RUF	文件：456.93 Kbytes Page：7 Pages	ShortCircuitRatedIGBT GeneralDescription FairchildsRUFseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswher	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
SGH10N120RUFD	文件：511.24 Kbytes Page：8 Pages	ShortCircuitRatedIGBT GeneralDescription FairchildsRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinvertersw	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
UG10N120	文件：153.29 Kbytes Page：3 Pages	NPTSERIESN-CHANNELIGBT	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC

详细参数

型号：
SGH10N120RUFDTU
功能描述：
IGBT 晶体管
RoHS：
否
制造商：
Fairchild Semiconductor
配置：
集电极—发射极最大电压
VCEO：
650 V
集电极—射极饱和电压：
2.3 V
栅极/发射极最大电压：
20 V 在25
C的连续集电极电流：
150 A
栅极—射极漏泄电流：
400 nA
功率耗散：
187 W
封装/箱体：
TO-247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市安富世纪电子有限公司	SGH10N120RUFDTU		23+	TO-220	8000	只做原装现货	询价
深圳市河锋鑫科技有限公司	SGH10N60	IR	22+	TO-3P	6000	终端可免费供样,支持BOM配单	询价
深圳市永贝尔科技有限公司	SGH10N60RUF	FAIRCHILD	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市国宇半导体科技有限公司	SGH10N60RUF	FAIRCHILD/仙童	23+	TO	10000	公司只做原装正品	询价
京海半导体(深圳)有限公司	SGH10N60RUF	FAIRCHILD/仙童	21+	TO3P	10000	原装现货假一罚十	询价
贸泽芯城（深圳）电子科技有限公司	SGH10N60RUF	FAIRCHILD/仙童		TO	11200	原厂授权一级代理、全球订货优势渠道、可提供一站式BO	询价
深圳市跃创芯科技有限公司	SGH10N60RUF	FAIRCHILD/仙童	22+	TO	25000	只做原装进口现货,专注配单	询价
深圳市得捷芯城科技有限公司	SGH10N60RUF	FAIRCHILD/仙童	23+	NA/	17138	原厂直销,现货供应,账期支持!	询价
深圳市创新迹电子有限公司	SGH10N60RUF	FAIRCHILD/仙童	22+	TO	25000	只做原装进口现货,专注配单	询价
深圳市惊羽科技有限公司	SGH10N60RUF	ON-安森美	24+25+/26+27+	TO-247-3	78800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价

更多SGH10N120RUFDTU供应商更新时间2024-6-8 15:00:00

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