首页 >BRG10N120D>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
BRG10N120D | Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | |
35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
35A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
35A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
35A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
35A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
1200V/10ATrenchFieldStopIGBT | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
ZeroReverseRecoveryCurrent Features ZeroReverseRecoveryCurrent ZeroForwardRecoveryVoltage Temperature-independentSwitchingBehavior PositiveTemperatureCoefficientonVF High-speedswitchingpossible Highsurgecurrentcapability Applications SwitchModePowerSupply(SMPS) MotorDrives | FS First Silicon Co., Ltd | FS | ||
HighvoltageDC-DCconverters | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
Automotive-gradesiliconcarbidePowerMOSFET1200V,12A,520mΩ(typ.,TJ=150°C)inanHiP247package Features •AEC-Q101qualified •Verytightvariationofon-resistancevs.temperature •Veryhighoperatingtemperaturecapability(TJ=200°C) •Veryfastandrobustintrinsicbodydiode •Lowcapacitance Applications •Motordrives •EVchargers •HighvoltageDC-DCconverters •Swi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
ShortCircuitRatedIGBT GeneralDescription FairchildsRUFseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswher | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
ShortCircuitRatedIGBT GeneralDescription FairchildsRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinvertersw | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
NPTSERIESN-CHANNELIGBT | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
进口原装 |
23+ |
SOP-16 |
2500 |
特价库存 |
询价 | ||
BLUEROCKET |
21+ROHS |
TO247 |
28888 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
EPCOS/爱普科斯 |
QFN |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
EPCOS/爱普科斯 |
23+ |
QFN |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
EPCOS/爱普科斯 |
2022 |
QFN |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
EPCOS/爱普科斯 |
QFN |
162 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | |||
EPCOS/爱普科斯 |
09+ |
QFN |
162 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
EPCOS/爱普科斯 |
23+ |
NA/ |
162 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
EPCOS |
2023+ |
QFN |
33001 |
询价 | |||
BERG |
新 |
1000 |
全新原装 货期两周 |
询价 |
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