零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
10N120BN | 35A, 1200V, NPT Series N-Channel IGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | |
10N120BN | 35A, 1200V, NPT Series N-Channel IGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
Insulated-GateBipolarTransistorinaTO-3PPlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
35A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
35A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
1200V/10ATrenchFieldStopIGBT | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
ZeroReverseRecoveryCurrent Features ZeroReverseRecoveryCurrent ZeroForwardRecoveryVoltage Temperature-independentSwitchingBehavior PositiveTemperatureCoefficientonVF High-speedswitchingpossible Highsurgecurrentcapability Applications SwitchModePowerSupply(SMPS) MotorDrives | FS First Silicon Co., Ltd | FS | ||
HighvoltageDC-DCconverters | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
Automotive-gradesiliconcarbidePowerMOSFET1200V,12A,520mΩ(typ.,TJ=150°C)inanHiP247package Features •AEC-Q101qualified •Verytightvariationofon-resistancevs.temperature •Veryhighoperatingtemperaturecapability(TJ=200°C) •Veryfastandrobustintrinsicbodydiode •Lowcapacitance Applications •Motordrives •EVchargers •HighvoltageDC-DCconverters •Swi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
ShortCircuitRatedIGBT GeneralDescription FairchildsRUFseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswher | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
ShortCircuitRatedIGBT GeneralDescription FairchildsRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinvertersw | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
NPTSERIESN-CHANNELIGBT | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
23+ |
N/A |
85900 |
正品授权货源可靠 |
询价 | |||
FAIRCHILD/仙童 |
2021+ |
TO-247 |
8000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
FAIRCHILD |
22+ |
TO-263 |
25000 |
原装现货,价格优惠,假一罚十 |
询价 | ||
FAIRCHILD |
04+ |
TO-263 |
17 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
FAIRCHILD |
2023+ |
TO263 |
8700 |
原装现货 |
询价 | ||
HAR |
23+ |
TO-247 |
9980 |
价格优势、原装现货、客户至上。欢迎广大客户来电查询 |
询价 | ||
HARRIS |
23+ |
TO-3P |
5000 |
原装正品,假一罚十 |
询价 | ||
FAIRCHILD/仙童 |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
FAIRCHILD/仙童 |
22+ |
TO-247 |
6000 |
十年配单,只做原装 |
询价 | ||
FAIRCHILD |
TO-247 |
608900 |
原包原标签100%进口原装常备现货! |
询价 |
相关规格书
更多- 10N120BND
- 10N12-220
- 10N15
- 10N15G-TF1-T
- 10N15G-TN3-T
- 10N15L-TF1-T
- 10N15L-TN3-T
- 10N20C
- 10N30_15
- 10N30G-TA3-T
- 10N30G-TN3-R
- 10N30L-TA3-T
- 10N30L-TM3-T
- 10N30L-TN3-T
- 10N40
- 10N40G-TF1-T
- 10N40L-TF1-T
- 10N4R5
- 10N50
- 10N50A
- 10N50C
- 10N50G-TA3-T
- 10N50G-TF1-T
- 10N50KL-TF2-T
- 10N50L-TA3-T
- 10N50L-TF1-T
- 10N60
- 10N60
- 10N60
- 10N60
- 10N60
- 10N60
- 10N60
- 10N60
- 10N60_12
- 10N60_V01
- 10N60-A-TA3-T
- 10N60-B-TA3-T
- 10N60C5M
- 10N60G
- 10N60G-TA3-T
- 10N60G-TA3-T
- 10N60G-TF1-T
- 10N60G-TF2-T
- 10N60G-TF3-T
相关库存
更多- 10N120BND
- 10N12-TO3
- 10N15_15
- 10N15G-TF1-T
- 10N15L-TA3-T
- 10N15L-TF1-T
- 10N20
- 10N30
- 10N30G-TA3-T
- 10N30G-TM3-T
- 10N30G-TN3-T
- 10N30L-TA3-T
- 10N30L-TN3-R
- 10N40
- 10N40G-TA3-T
- 10N40L-TA3-T
- 10N4R5
- 10N50
- 10N50_1109
- 10N50B
- 10N50G-TA3-T
- 10N50G-TF1-T
- 10N50KG-TF2-T
- 10N50K-MT
- 10N50L-TA3-T
- 10N50L-TF1-T
- 10N60
- 10N60
- 10N60
- 10N60
- 10N60
- 10N60
- 10N60
- 10N60_10
- 10N60_15
- 10N60A
- 10N60B
- 10N60C
- 10N60F
- 10N60G-T2Q-T
- 10N60G-TA3-T
- 10N60G-TF1-T
- 10N60G-TF2-T
- 10N60G-TF3-T
- 10N60G-TF3T-T