首页 >IXTT170N10P>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IXTT170N10P | N-Channel Enhancement Mode Avalanche Rated | IXYS IXYS Integrated Circuits Division | IXYS | |
IXTT170N10P | PolarTM Power MOSFET | IXYS IXYS Integrated Circuits Division | IXYS | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
100VN-ChannelPowerMosfet | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
N-ChannelPowerMOSFET | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
PolarHiperFETPowerMOSFET Polar™HiperFET™PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicRectifier Features •InternationalStandardPackages •FastIntrinsicRectifier •AvalancheRated •LowRDS(ON)andQG •LowPackageInductance Advantages •HighPowerDensity •EasytoMount •Spac | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFET HiPerFET™PowerMOSFET SingleMOSFETDie Features •Internationalstandardpackages •EncapsulatingepoxymeetsUL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwi | IXYS IXYS Integrated Circuits Division | IXYS | ||
PolarHiperFETPowerMOSFET Polar™HiperFET™PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicRectifier Features •InternationalStandardPackages •FastIntrinsicRectifier •AvalancheRated •LowRDS(ON)andQG •LowPackageInductance Advantages •HighPowerDensity •EasytoMount •Spac | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFET HiPerFET™PowerMOSFET SingleMOSFETDie Features •Internationalstandardpackages •EncapsulatingepoxymeetsUL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwi | IXYS IXYS Integrated Circuits Division | IXYS | ||
N-ChannelEnhancementModeAvalancheRated | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeAvalancheRated | IXYS IXYS Integrated Circuits Division | IXYS |
详细参数
- 型号：
IXTT170N10P
- 功能描述：
MOSFET 170 Amps 100V 0.009 Ohm Rds
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
24+ |
TO-268AA |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
N/A |
22+ |
N/A |
686 |
原装正品，支持实单特价出 |
询价 | ||
IXYS |
08+(pbfree) |
TO-268 |
8866 |
询价 | |||
IXYS |
1931+ |
N/A |
18 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
IXYS |
1809+ |
TO-268 |
326 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IXYS |
22+ |
NA |
18 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
IXYS |
22+ |
TO2683 D3Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
询价 | ||
IXYS |
21+ |
TO2683 D3Pak (2 Leads + Tab) T |
13880 |
公司只售原装,支持实单 |
询价 | ||
IXYS |
23+ |
TO2683 D3Pak (2 Leads + Tab) T |
9000 |
原装正品，支持实单 |
询价 | ||
IXYS |
21+ |
N/A |
254 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 |
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