首页 >IXFN32N100P>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

IXFN32N100P

Polar Power MOSFET HiPerFET

IXYS

IXYS Integrated Circuits Division

IXFK32N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=32A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.32Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFK32N100P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=32A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.32Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFK32N100P

PolarPowerMOSFETHiPerFET

IXYS

IXYS Integrated Circuits Division

IXFK32N100P

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=27A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.32Ω(Max)@VGS=10V ·Fast-recoverybodydiode APPLICATIONS ·DC-DCConverters ·ACandDCmotorcontrols ·LaserDrivers

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFR32N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=340mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFR32N100P

PolarPowerMOSFETHiPerFET

IXYS

IXYS Integrated Circuits Division

IXFX32N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=32A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.32Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFX32N100P

PolarPowerMOSFETHiPerFET

IXYS

IXYS Integrated Circuits Division

详细参数

  • 型号:

    IXFN32N100P

  • 功能描述:

    MOSFET 32 Amps 1000V 0.32 Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IXYS
24+
SOT-227B
30000
晶体管-分立半导体产品-原装正品
询价
IXYS
19+/20+
SOT-227B
865
主打产品价格优惠.全新原装正品
询价
IXYS/艾赛斯
23+
SOT-227
26008
原装正品 华强现货
询价
IXYS
2022
SOT-227B
58
原厂原装正品,价格超越代理
询价
IXYS
23+
MOSFETN-CH1000V27ASOT-22
1690
专业代理销售半导体模块,能提供更多数量
询价
IXYS
2023+
MODULE
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
IXYS
18+
MODULE
2050
公司大量全新原装 正品 随时可以发货
询价
IXYS
23+
SOT227
266
询价
IXYS
1931+
N/A
18
加我qq或微信,了解更多详细信息,体验一站式购物
询价
IXYS
1809+
SOT-227
326
就找我吧!--邀您体验愉快问购元件!
询价
更多IXFN32N100P供应商 更新时间2024-6-3 17:09:00