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IXFN90N30

HiPerFET Power MOSFETs Single Die MOSFET

IXYS

IXYS Integrated Circuits Division

DAM90N30D

N-ChannelEnhancementModeMOSFET

DACO

DACO

DAM90N30G

N-ChannelEnhancementModeMOSFET

DACO

DACO

FGA90N30

300VPDPIGBT

Description EmployingUnifiedIGBTTechnology,FGA90N30provideslowconductionandswitchingloss.FGA90N30offerstheoptimumsolutionforPDPapplicationswherelowcondutionlossisessential. Features •HighCurrentCapability •Lowsaturationvoltage:VCE(sat),Typ=1.1V@IC=

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGA90N30D

300VPDPIGBT

Description EmployingUnifiedIGBTTechnology,FGA90N30Dprovideslowconductionandswitchingloss.FGA90N30DofferstheoptimumsolutionforPDPapplicationswherelowcondutionlossisessential. Features •HighCurrentCapability •Lowsaturationvoltage:VCE(sat),Typ=1.1V@IC

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGFP90N30TU

300V,90APDPIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGP90N30

300V,90APDPIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGP90N30TU

300V,90APDPIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGPF90N30

300V,90APDPIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IXFK90N30

HiPerFETPowerMOSFETs

Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Applications •DC-DCconverters •Battery

IXYS

IXYS Integrated Circuits Division

IXFK90N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=90A@TC=25℃ ·DrainSourceVoltage :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFR90N30

HiPerFETPowerMOSFETsISOPLUS247

HiPerFET™PowerMOSFETsISOPLUS247™(ElectricallyIsolatedBackSurface) SingleMOSFETDie Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •Lowdraintotabcapacitance(

IXYS

IXYS Integrated Circuits Division

IXFR90N30

PowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXFX90N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=90A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFX90N30

HiPerFETPowerMOSFETs

Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Applications •DC-DCconverters •Battery

IXYS

IXYS Integrated Circuits Division

详细参数

  • 型号:

    IXFN90N30

  • 功能描述:

    MOSFET 90 Amps 300V 0.033 Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IXYS
19+/20+
SOT-227B
1000
主打产品价格优惠.全新原装正品
询价
IXYS
06+
600
询价
IXYS
2022
SOT-227B
58
原厂原装正品,价格超越代理
询价
IXYS
N/A
主营模块
190
原装正品,现货供应
询价
IXYS
23+
MOSFETN-CH300V90ASOT-227
1726
专业代理销售半导体模块,能提供更多数量
询价
IXYS
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IXYS
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
询价
IXYS
2023+
MODULE
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
IXYS
18+
2173
公司大量全新正品 随时可以发货
询价
IXYS
23+
SOT227
266
询价
更多IXFN90N30供应商 更新时间2024-6-8 8:02:00