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FGA90N30D

300V PDP IGBT

Description EmployingUnifiedIGBTTechnology,FGA90N30Dprovideslowconductionandswitchingloss.FGA90N30DofferstheoptimumsolutionforPDPapplicationswherelowcondutionlossisessential. Features •HighCurrentCapability •Lowsaturationvoltage:VCE(sat),Typ=1.1V@IC

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGA90N30DTU

包装:管件 封装/外壳:TO-3P-3,SC-65-3 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 300V 90A 219W TO3P

ONSEMION Semiconductor

安森美半导体安森美半导体公司

DAM90N30D

N-ChannelEnhancementModeMOSFET

DACO

DACO

DAM90N30G

N-ChannelEnhancementModeMOSFET

DACO

DACO

FGA90N30

300VPDPIGBT

Description EmployingUnifiedIGBTTechnology,FGA90N30provideslowconductionandswitchingloss.FGA90N30offerstheoptimumsolutionforPDPapplicationswherelowcondutionlossisessential. Features •HighCurrentCapability •Lowsaturationvoltage:VCE(sat),Typ=1.1V@IC=

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGFP90N30TU

300V,90APDPIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGP90N30

300V,90APDPIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGP90N30TU

300V,90APDPIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGPF90N30

300V,90APDPIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IXFK90N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=90A@TC=25℃ ·DrainSourceVoltage :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFK90N30

HiPerFETPowerMOSFETs

Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Applications •DC-DCconverters •Battery

IXYS

IXYS Integrated Circuits Division

IXFN90N30

HiPerFETPowerMOSFETsSingleDieMOSFET

IXYS

IXYS Integrated Circuits Division

IXFR90N30

HiPerFETPowerMOSFETsISOPLUS247

HiPerFET™PowerMOSFETsISOPLUS247™(ElectricallyIsolatedBackSurface) SingleMOSFETDie Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •Lowdraintotabcapacitance(

IXYS

IXYS Integrated Circuits Division

IXFR90N30

PowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXFX90N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=90A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFX90N30

HiPerFETPowerMOSFETs

Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Applications •DC-DCconverters •Battery

IXYS

IXYS Integrated Circuits Division

详细参数

  • 型号:

    FGA90N30D

  • 制造商:

    FAIRCHILD

  • 制造商全称:

    Fairchild Semiconductor

  • 功能描述:

    300V PDP IGBT

供应商型号品牌批号封装库存备注价格
FAIRCHILD
08+(pbfree)
TO-3P
8866
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FAIRCHILD
21+
35200
一级代理/放心采购
询价
FAIRCHILD/仙童
23+
TO-3P
90000
只做原厂渠道价格优势可提供技术支持
询价
FSC
21+
TO-3P
5
原装现货假一赔十
询价
FSC
22+
TO-3P
32350
原装正品 假一罚十 公司现货
询价
FAIRCHILD/仙童
23+
TO-3P
10000
公司只做原装正品
询价
FSC
21+
TO-3P
50000
全新原装正品现货,支持订货
询价
FAIRCHILD/仙童
22+
TO-3P
6000
十年配单,只做原装
询价
FSC
04+
TO-3P
5
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
更多FGA90N30D供应商 更新时间2024-5-31 10:50:00