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IXFH14N80	文件：100 Kbytes Page：4 Pages	HiPerFET Power MOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodrive	IXYS IXYS Integrated Circuits Division	IXYS
IXFH14N80	文件：372.81 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH14N80P	文件：232.16 Kbytes Page：5 Pages	PolarHV HiPerFET Power MOSFET PolarHV™HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •	IXYS IXYS Integrated Circuits Division	IXYS
IXFH14N80P	文件：372.42 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.72Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFC14N80P	文件：97.86 Kbytes Page：4 Pages	PolarHVHiPerFETPowerMOSFETISOPLUS220	IXYS IXYS Integrated Circuits Division	IXYS
IXFC14N80P	文件：324.23 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.77Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFQ14N80	文件：312.56 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=720mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFQ14N80P	文件：232.16 Kbytes Page：5 Pages	PolarHVHiPerFETPowerMOSFET PolarHV™HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •	IXYS IXYS Integrated Circuits Division	IXYS
IXFT14N80P	文件：232.16 Kbytes Page：5 Pages	PolarHVHiPerFETPowerMOSFET PolarHV™HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •	IXYS IXYS Integrated Circuits Division	IXYS
IXFV14N80P	文件：232.16 Kbytes Page：5 Pages	PolarHVHiPerFETPowerMOSFET PolarHV™HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •	IXYS IXYS Integrated Circuits Division	IXYS
IXFV14N80PS	文件：232.16 Kbytes Page：5 Pages	PolarHVHiPerFETPowerMOSFET PolarHV™HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •	IXYS IXYS Integrated Circuits Division	IXYS
IXTH14N80	文件：372.33 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •DrainCurrentID=14A@TC=25℃ •DrainSourceVoltage- :VDSS=800V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max) •100avalanchetested •MinimumLot-to-Lotva	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXTH14N80	文件：80.97 Kbytes Page：4 Pages	MegaMOSFET MegaMOS™FET N-ChannelEnhancementMode Features •Internationalstandardpackage •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Lowpackageinductance(	IXYS IXYS Integrated Circuits Division	IXYS

详细参数

型号：
IXFH14N80
功能描述：
MOSFET 14 Amps 800V 0.7 Rds
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	IXFH14N80	IXYS	24+	TO-247AD(IXFH)	30000	晶体管-分立半导体产品-原装正品	询价
深圳市恒创达实业有限公司	IXFH14N80	IXYS	17+	TO-3P	6200		询价
深圳市永贝尔科技有限公司	IXFH14N80	IXYS	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市振宏微科技有限公司	IXFH14N80	IXYS	23+	TO-3P	6000	专做原装正品,假一罚百!	询价
深圳市芯祺盛科技有限公司	IXFH14N80	IXYS	1746+	TO247	8862	深圳公司现货!特价支持工厂客户!提供样品!	询价
深圳兆威电子有限公司	IXFH14N80	VB	2019	TO-247AD	55000	绝对原装正品假一罚十!	询价
瀚佳科技(深圳)有限公司	IXFH14N80	IXYS	18+	TO-247	2050	公司大量全新原装正品随时可以发货	询价
深圳市兴灿科技有限公司	IXFH14N80	IXYS	23+	TO-247	564		询价
深圳市艾宇欣科技有限公司	IXFH14N80	IXYS	1931+	N/A	18	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳市科雨电子有限公司	IXFH14N80	IXYS	1809+	TO-247	326	就找我吧!--邀您体验愉快问购元件!	询价

更多IXFH14N80供应商更新时间2024-6-6 17:08:00

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