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IXFV14N80P	文件：232.16 Kbytes Page：5 Pages	PolarHV HiPerFET Power MOSFET PolarHV™HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •	IXYS IXYS Integrated Circuits Division	IXYS
IXFV14N80PS	文件：232.16 Kbytes Page：5 Pages	PolarHV HiPerFET Power MOSFET PolarHV™HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •	IXYS IXYS Integrated Circuits Division	IXYS
IXFC14N80P	文件：97.86 Kbytes Page：4 Pages	PolarHVHiPerFETPowerMOSFETISOPLUS220	IXYS IXYS Integrated Circuits Division	IXYS
IXFC14N80P	文件：324.23 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.77Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH14N80	文件：372.81 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH14N80	文件：100 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodrive	IXYS IXYS Integrated Circuits Division	IXYS
IXFH14N80P	文件：232.16 Kbytes Page：5 Pages	PolarHVHiPerFETPowerMOSFET PolarHV™HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •	IXYS IXYS Integrated Circuits Division	IXYS
IXFH14N80P	文件：372.42 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.72Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFQ14N80	文件：312.56 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=720mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFQ14N80P	文件：232.16 Kbytes Page：5 Pages	PolarHVHiPerFETPowerMOSFET PolarHV™HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •	IXYS IXYS Integrated Circuits Division	IXYS
IXFT14N80P	文件：232.16 Kbytes Page：5 Pages	PolarHVHiPerFETPowerMOSFET PolarHV™HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •	IXYS IXYS Integrated Circuits Division	IXYS
IXTH14N80	文件：372.33 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •DrainCurrentID=14A@TC=25℃ •DrainSourceVoltage- :VDSS=800V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max) •100avalanchetested •MinimumLot-to-Lotva	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXTH14N80	文件：80.97 Kbytes Page：4 Pages	MegaMOSFET MegaMOS™FET N-ChannelEnhancementMode Features •Internationalstandardpackage •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Lowpackageinductance(	IXYS IXYS Integrated Circuits Division	IXYS

详细参数

型号：
IXFV14N80P
功能描述：
MOSFET 14 Amps 800V 0.72 Rds
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市华来深电子有限公司	IXFV14N80P	IXYS	23+	TO-220-3	11846	一级代理商现货批发,原装正品,假一罚十	询价
中科航电(深圳)半导体技术有限公司	IXFV14N80P	IXYS	19+	TO-220-3	56800	ShortTab	询价
深圳市宏捷佳电子科技有限公司	IXFV14N80P	IXYS	23+	PLUSTO-220	12300	全新原装真实库存含13点增值税票!	询价
深圳兆威电子有限公司	IXFV14N80P	IXYS	20+	TO-220-3	90000	全新原装正品/库存充足	询价
深圳市国宇半导体科技有限公司	IXFV14N80P	IXYS/艾赛斯	23+	PLUS220	10000	公司只做原装正品	询价
深圳市河锋鑫科技有限公司	IXFV14N80P	IXYS	22+	TO2203 Short Tab	9000	原厂渠道,现货配单	询价
深圳市芯福林电子科技有限公司	IXFV14N80P	IXYS	21+	TO2203 Short Tab	13880	公司只售原装,支持实单	询价
易创佳业科技（深圳）有限公司	IXFV14N80P	IXYS	23+	TO2203 Short Tab	9000	原装正品，支持实单	询价
深圳市鹏顺微电子科技有限公司	IXFV14N80P	IXYS	2022+	TO-220-3(SMT)标片	38550	全新原装支持表配单中国著名电子元器件独立分销	询价
深圳市能元时代电子有限公司	IXFV14N80P	原装正品	23+	TO-220-3	67992	##公司主营品牌长期供应100%原装现货可含税提供技术	询价

更多IXFV14N80P供应商更新时间2024-6-6 10:55:00

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