首页 >IXFK102N30P>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

IXFK102N30P

PolarHT HiPerFET Power MOSFET

PolarHT™HiPerFETPowerMOSFET N-ChannelEnhancementMode FastIntrinsicDiode AvalancheRated Features •Internationalstandardpackage •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •

IXYS

IXYS Integrated Circuits Division

IXFK102N30P

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=102A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFN102N30P

PolarHVHiPerFETPowerMOSFET

PolarHV™HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackage •EncapsulatingepoxymeetsUL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •Fastrecoverydiode •UnclampedInducti

IXYS

IXYS Integrated Circuits Division

IXFR102N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=36mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFR102N30P

PolarHTHiPerFETPowerMOSFET

PolarHT™HiPerFETPowerMOSFET(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode FastIntrinsicDiodeAvalancheRated Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •Intern

IXYS

IXYS Integrated Circuits Division

IXTK102N30P

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTK102N30P

PolarHTPowerMOSFET

PolarHT™PowerMOSFET N-ChannelEnhancementMode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity

IXYS

IXYS Integrated Circuits Division

详细参数

  • 型号:

    IXFK102N30P

  • 功能描述:

    MOSFET 102 Amps 300V 0.033 Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IXYS
24+
TO-264AA(IXFK)
30000
晶体管-分立半导体产品-原装正品
询价
IXYS/艾赛斯
23+
TO-264
65000
原装正品 华强现货
询价
IXYS
2102
TO-264
4000
全新原装公司现货
询价
IXYS
2102
TO-264
4000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
IXYS/艾赛斯
17+
TO-264
31518
原装正品 可含税交易
询价
IXYS/Littelfuse
23+
TO-264
550
只做原装提供一站式配套供货中利达
询价
IXYS/艾赛斯
24+
TO-264
13550
只做原装假一罚十
询价
Littelfuse/IXYS
23+
TO-264-3
7810
支持大陆交货,美金交易。原装现货库存。
询价
IXYS
08+(pbfree)
TO-264
8866
询价
IXYS
16+
TO-264
400
代理原装
询价
更多IXFK102N30P供应商 更新时间2024-6-11 17:21:00