首页 >IXFK120N20>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

IXFK120N20

HiPerFET Power MOSFETs

SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS) rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Applicatio

IXYS

IXYS Integrated Circuits Division

IXFK120N20

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=17mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFK120N20P

PolarHT HiPerFET Power MOSFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •FastIntrinsicDiode •LowQG •LowRDS(on) •LowDrain-to-TabCapacitance •LowPackageInductance Advantages •EasytoMount •SpaceSavings

IXYS

IXYS Integrated Circuits Division

IXFK120N20P

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFK120N20P

Polar HiPerFET Power MOSFET

IXYS

IXYS Integrated Circuits Division

IIPP120N20NFD

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPP120N20NFD

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPP120N20NFD

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IXFH120N20P

PolarHTHiPerFETPowerMOSFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •FastIntrinsicDiode •LowQG •LowRDS(on) •LowDrain-to-TabCapacitance •LowPackageInductance Advantages •EasytoMount •SpaceSavings

IXYS

IXYS Integrated Circuits Division

IXFN120N20

HiPerFETPowerMOSFETs

HiPerFETTMPowerMOSFETsSingleMOSFETDie N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •EncapsulatingepoxymeetsUL94V-0,flammabilityclassification •Internationalstandardpackage •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess

IXYS

IXYS Integrated Circuits Division

IXFN120N20

N-ChannelMOSFET

DESCRIPTION ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage -VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCconverters ·DCchoppers ·Batterychargers ·Temperatureandlightingcontrols ·Switched-modeandresonant-modepowersu

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFR120N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=90A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=23mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFR120N20

PowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXFR120N20

HiPerFETTMPowerMOSFETsISOPLUS247

HiPerFET™PowerMOSFET(ElectricallyIsolatedTab) N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features •SiliconChiponDirect-CopperBond(DCB)Substrate •IsolatedMountingSurface •2500V~ElectricalIsolation •AvalancheRated •FastIntrinsicRectifier •Lo

IXYS

IXYS Integrated Circuits Division

IXFX120N20

HiPerFETPowerMOSFETs

SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS) rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Applicatio

IXYS

IXYS Integrated Circuits Division

IXFX120N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=17mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTK120N20P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTK120N20P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Integrated Circuits Division

IXTQ120N20P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Integrated Circuits Division

IXTQ120N20P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    IXFK120N20

  • 功能描述:

    MOSFET 200V 120A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IXYS/LITTELFUSE
23+
TO-264
200
只做原装提供一站式配套供货中利达
询价
IXYS
07+/08+
TO-264AA
106
询价
IXYS
N/A
主营模块
190
原装正品,现货供应
询价
IXY
06+
TO-3PL
500
原装
询价
IXYS
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
2018+
SMD
5500
一级代理原装现货假一罚十
询价
IXYS
19+
TO-264-3
56800
TO-264AA
询价
IXYS
23+
TO-264
12300
全新原装真实库存含13点增值税票!
询价
IXYS
18+
TO-3PL
2050
公司大量全新原装 正品 随时可以发货
询价
IXYS
23+
TO-3PL
568
询价
更多IXFK120N20供应商 更新时间2024-6-10 13:21:00